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• Power transistor module board
• High-frequency device board
• Radiating/insulating plate for thyristor
• Mount board for semiconductor laser and light emission diode
• Hybrid module, ignition module
• IC package
• Thermo-module board
• Parts of semiconductor manufacturing equipment
|
Characteristic value
|
Unit
|
Sheet formed product
|
Press molded product
|
|
Density
|
g/cm3
|
3.3
|
3.3
|
|
Thermal conductivty
|
W/m•k (R.T.)
|
170
|
160
|
|
Coefficient of thermal expansion
|
x10-6/ºC (R.T.~400ºC)
|
4.6
|
4.6
|
|
Dielectric strength
|
KV/mm (R.T.)
|
15
|
15
|
|
Volume resistivity
|
Ω•cm (R. T.)
|
1014
|
1014
|
|
Dielectric constant
|
1MHz (R.T.)
|
9.0
|
9.0
|
|
Bending strength
|
MPa (R.T.)
|
450
|
300
|
107B Louisa Street
Port Townsend, WA 98368
Tel: 360-379-6707
Toll Free: 877-452-4910
Fax: 360-379-6907
info@mkt-intl.com
|
Item
|
Sheet formed product
|
Press molded product
|
|
Dimension
|
Max. 5"x7"
|
Max. 2"x2"
|
|
Thickness
|
0.5~1.5
(as fired) 0.3~1.0 (lapped) |
1~8 mm
|
|
Dimensional tolerance
|
±1%NLT
±0.1 mm |
±1%NLT
±0.1 mm |
|
Thickness tolerance *
|
±10%
|
±10%
|
|
Warp tolerance **
|
≤0.003mm/mm
|
≤0.003mm/mm
|
|
*Thickness tolerance of both-side polished product : ±0.05 mm
** Warp of both-sided polished product: ±0.0015 mm/mm |
||
| The Aluminium Nitride product is a new material having such characteristics as superior thermal conductivity, high electric insulation, and coefficient of thermal expansion similar to that of silicon (Si) and is drawing attention as a next-generation material with high thermal conductivity. | |
|
• High thermal conductivity about 7 times that of Alumina |
